? semiconductor components industries, llc, 2000 may, 2000 rev. 3 543 publication order number: mcr226/d
preferred device
reverse blocking thyristors designed and tested for repetitive peak operation required for cd ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. ? 150 amperes for 2 m s safe area ? high dv/dt ? very low forward aono voltage at high current ? low-cost to-226aa (to-92) ? device marking: device type, e.g., mcr226, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (r gk = ik, t j = 40 to +110 c, sine wave, 50 to 60 hz, gate open) mcr226 mcr228 v drm, v rrm 400 600 volts on-state current rms (180 conduction angles, t c = 80 c) i t(rms) 1.5 amps peak non-repetitive surge current, t a = 25 c (1/2 cycle, sine wave, 60 hz) i tsm 15 amps circuit fusing considerations (t = 8.3 ms) i 2 t 0.9 a 2 s forward peak gate power (pulse width 1.0 sec, t a = 25 c) p gm 0.5 watt forward average gate power (t = 8.3 msec, t a = 25 c) p g(av) 0.1 watt forward peak gate current (pulse width 1.0 m s, t a = 25 c) i fgm 0.2 amp reverse peak gate voltage (pulse width 1.0 m s, t a = 25 c) v rgm 5.0 volts operating junction temperature range @ rated v rrm and v drm t j 40 to +110 c storage temperature range t stg 40 to +150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 1.5 amperes rms 400 thru 600 volts preferred devices are recommended choices for future use and best overall value. http://onsemi.com to92 (to226aa) case 029 style 10 3 2 1 pin assignment 1 2 3 gate anode cathode k g a see detailed ordering and shipping information in the package dimensions section on page 549 of this data sheet. ordering information
mcr226, mcr228 http://onsemi.com 544 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 50 c/w thermal resistance, junction to ambient r q ja 160 c/w lead solder temperature (lead length 1/16 from case, 10 s max) t l +260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm ; r gk = 1000 ohms) t c = 25 c t c = 110 c i drm , i rrm e e e e 10 200 m a m a on characteristics peak forward onstate voltage (1) (i tm = 1 a peak) v tm e 1.2 1.7 volts gate trigger current (continuous dc) (2) t c = 25 c (v ak = 6 vdc, r l = 100 ohms) t c = 40 c i gt e e 30 e 200 500 m a gate trigger voltage (continuous dc) (2) t c = 25 c (v ak = 7 vdc, r l = 100 ohms) t c = 40 c v gt e e e e 0.8 1.2 volts gate nontrigger voltage (1) (v ak = 12 vdc, r l = 100 ohms) t c = 110 c v gd 0.1 e e volts holding current (v ak = 12 vdc, gate open) t c = 25 c initiating current = 200 ma t c = 40 c i h e e 2.0 e 5.0 10 ma dynamic characteristics critical rate of rise of offstate voltage (t c = 110 c) dv/dt e 25 e v/ m s (1) pulse width = 1.0 ms, duty cycle 1%. (2) r gk current not included in measurement.
mcr226, mcr228 http://onsemi.com 545 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) t , maximum allowable a ambient temperature ( c) t , maximum allowable c case temperature ( c) dc dc i t(av) , average on-state current (amps) 1.8 0 0.2 0.4 0.6 0.8 120 1.0 0 20 40 60 80 100 140 i t(av) , average on-state current (amp) current derating 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 100 1.6 20 60 140 a = conduction angle a = 180 ? = conduction angle a = 180 figure 1. maximum case temperature figure 2. maximum ambient temperature
mcr226, mcr228 http://onsemi.com 546 i , instantaneous on-state current (amp) t r(t), transient thermal resistance (normalized) 1.5 v t , instantaneous on-state voltage (volts) 0 0.5 1.0 2.0 0.01 0.05 2.5 0.02 0.1 0.03 3.0 0.07 0.2 0.3 0.5 0.7 1.0 2.0 5.0 25 c t j = 110 c 1000 t, time (ms) 10000 5000 0.2 2000 500 200 100 20 50 10 5.0 2.0 1.0 0.5 0.05 0.1 0.01 0.02 0.07 0.7 0.03 0.1 0.2 0.3 0.5 1.0 figure 3. typical forward voltage figure 4. thermal response
mcr226, mcr228 http://onsemi.com 547 p maximum average power dissipation (watts) (av) i , holding current (ma) h v , gate trigger voltage (volts) gt i gate trigger current ( gt m 0.4 0.5 0.6 0.7 0.8 100 0.3 75 50 0 25 75 50 25 t j , junction temperature ( c) v ak = 7.0 v r l = 100 80 20 0110 100 60 40 t j , junction temperature ( c) 1.0 5.0 2.0 40 10 20 v ak = 12 v r l = 100 w 1.0 2.0 3.0 5.0 10 20 30 0 40 20 50 20 40 60 80 100 100 110 t j junction temperature ( c) 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 0.2 0.6 i t(av) , average on-state current (amps) 1.6 1.2 0.4 0 dc 1.4 120 1.0 90 0.8 180 60 30 typical characteristics a) figure 5. typical gate trigger voltage figure 6. typical gate trigger current figure 7. typical holding current figure 8. power dissipation 110
mcr226, mcr228 http://onsemi.com 548 to92 eia radial tape in fan fold box or on reel h2a h2a h f1 f2 p2 p2 p1 p d w w1 l1 w2 h2b h2b t1 t t2 h4 h5 h1 l figure 9. device positioning on tape specification inches millimeter symbol item min max min max d tape feedhole diameter 0.1496 0.1653 3.8 4.2 d2 component lead thickness dimension 0.015 0.020 0.38 0.51 f1, f2 component lead pitch 0.0945 0.110 2.4 2.8 h bottom of component to seating plane .059 .156 1.5 4.0 h1 feedhole location 0.3346 0.3741 8.5 9.5 h2a deflection left or right 0 0.039 0 1.0 h2b deflection front or rear 0 0.051 0 1.0 h4 feedhole to bottom of component 0.7086 0.768 18 19.5 h5 feedhole to seating plane 0.610 0.649 15.5 16.5 l defective unit clipped dimension 0.3346 0.433 8.5 11 l1 lead wire enclosure 0.09842 e 2.5 e p feedhole pitch 0.4921 0.5079 12.5 12.9 p1 feedhole center to center lead 0.2342 0.2658 5.95 6.75 p2 first lead spacing dimension 0.1397 0.1556 3.55 3.95 t adhesive tape thickness 0.06 0.08 0.15 0.20 t1 overall taped package thickness e 0.0567 e 1.44 t2 carrier strip thickness 0.014 0.027 0.35 0.65 w carrier strip width 0.6889 0.7481 17.5 19 w1 adhesive tape width 0.2165 0.2841 5.5 6.3 w2 adhesive tape position .0059 0.01968 .15 0.5 notes: 1. maximum alignment deviation between leads not to be greater than 0.2 mm. 2. defective components shall be clipped from the carrier tape such that the remaining protrusion (l) does not exceed a maximum of 11 mm. 3. component lead to tape adhesion must meet the pull test requirements. 4. maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. no more than 1 consecutive missing component is permitted. 7. a tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. splices will not interfere with the sprocket feed holes.
mcr226, mcr228 http://onsemi.com 549 ordering & shipping information: mcr22 series packaging options, device suffix u.s. europe equivalent shipping description of to92 tape orientation mcr226,8 mcr226rlra mcr226rlrp mcr228rl1 mcr228zl1 radial tape and reel (2k/reel) bulk in box (5k/box) radial tape and reel (2k/reel) radial tape and fan fold box (2k/box) radial tape and fan fold box (2k/box) flat side of to92 and adhesive tape visible n/a, bulk round side of to92 and adhesive tape visible round side of to92 and adhesive tape visible flat side of to92 and adhesive tape visible
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